NXP MRF300AN RF Power LDMOS Transistors 1.8 to 250 MHz 50 VDC 300 W New Original
USD 69.99 USD
Specifications
| Collector-Emitter Voltage | -50 V, 50 V |
| Maximum Collector-Base Voltage | -300 V |
| Maximum Base-Emitter Voltage | -3 V |
| MPN | MRF300AN |
| Transistor Category | Power Transistor |
| Minimum Operating Temperature | -40 °C (-40 °F) |
| Brand | NXP |
| Maximum Base-Emitter Saturation Voltage | -1.8 V |
| Maximum Collector-Emitter Saturation Voltage | 1.0 V |
| Maximum Power Dissipation | 300 W |
| Maximum Operating Frequency | 250 MHz |
| Maximum Operating Temperature | 105 °C (221 °F) |
| Country Of Origin | United States |
Series: MRF300AN. Manufacturer: NXP. Product Category: RF MOSFET Transistors. Product Type: RF MOSFET Transistors. Id - Continuous Drain Current: 30 A. Forward Transconductance - Min: 28 S. Output Power: 330 W.
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